New compact, high performance 7th Generation IGBT module with direct liquid cooling for EV/HEV inverters

Abstract

This paper presents a new compact, direct liquid-cooled IGBT power module series (J1-Series) addressing major requirements for Electric and Hybrid Electric (EV/HEV) power-train inverter applications in terms of high power-density, light-weight, and high-reliability. The J1-Series is fitted with the latest state-of-the-art IGBT chips (7th Generation Carrier Stored Trench Bipolar Transistor (CSTBT)) with optimized Vce(sat)-vs-Eoff trade-off characteristic achieving high-efficiency and enabling compact designs with high power handling capability. The new IGBT module comes in a 6-in-1 circuit configuration compact package featuring the well proven wire-bond-less Direct Lead Bonding (DLB) approach for high-reliability and extended power cycling lifetime. The package also integrates a direct liquid-cooled Aluminum pin-fin for light-weight and durable performance. Compared to conventional EV/HEV modules, the new J1-Series package with 7th Generation IGBT chips achieves more than 10% power-loss reduction, 43% internal inductance reduction, 30% improved thermal performance, 40% foot-print reduction, and 76% weight reduction.