Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM

Abstract

A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 |jm CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, excellent memory performances, such as low operation current (down to 25 μ A), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (>10 cycles), and reliable data retention (10 years extrapolation at 200°C) have been demonstrated in our memory device. Moreover, the benefits of high yield, robust memory performance at high temperature (200°C), excellent scalability, and multi-level operation promise its application in the next generation nonvolatile memory.