Heterostructure Ge-Body pTFETs for Analog/RF Applications

Abstract

This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure {p}-channel tunnel field-effect transistors ( {p} TFETs) with Ge (Germanium) channel and different compound semiconductor source. In order to study the figure-of-merits (FOMs) of analog and RF performances, various Ge-channel {p} TFETs are designed with Ge, GaAsP, SiGe, and InAlAs sources. The numerical simulation data show an improvement in the FOMs of analog performance such as drain current ( I{ds} ), transconductance ( g{m} ), transconductance-generation-factor ( g{m} /I {ds} ), and intrinsic gain ( g{m} R{o} ) of the devices with compound semiconductor source compared to Ge-source {p} TFET devices. Similarly, an improvement in the RF FOMs such as gate-To-source ( \text{C}{gs} ) and gate-To-drain ( \text{C}{gd} ) capacitances, maximum frequency of oscillation ( f{MAX} ), and cutoff frequency ( f{T} ) is observed for the devices with GaAsP, SiGe, and InAlAs source compared to Ge-source {p} TFETs. The simulation results also show that the common-source amplifiers, designed with Ge-heterostructure {p} TFETs, exhibit a significant enhancement in gain and Gain-Bandwidth product of the circuit.