Wafer-scale epitaxial low density inas/gaas quantum dot for single photon emitter in three-inch substrate

Abstract

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of 0.96/µm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3 ± 0.08 GHz, the second-order correlation factor g2 (τ) = 0.0322 ± 0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.