Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors

Abstract

Solution-processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light-emitting-diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light-emitting field-effect transistors (LEFETs) has been surprisingly limited, wth only a few low-performance devices reported. The development of hybrid LEFETs consisting of a solution-processed self-organized multiple-quantum-well lead iodide perovskite layer grown onto an electron-transporting In2O3/ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm2 V−1 s−1) and a large current on/off ratio (>106), combined with near infrared light emission (λmax = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m−2). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart-pixel-format display applications.