Gate-induced superconductivity in layered-material-based electric double layer transistors

Abstract

High carrier density part of many materials could be accessed by a variation of the field effect transistor technique: electric double layer transistor. Carrier density regime of n∼1014 cm-2 can be easily accessed electrostatically realizing effective doping without chemical modification. In this study, we utilized micro-cleavage on a number of interesting layered materials. And realized high carrier density state and high performance transport on atomically flat surfaces. © Published under licence by IOP Publishing Ltd.