Abstract
Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., … Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. Advanced Materials, 25(24), 3357–3364. https://doi.org/10.1002/adma.201300757
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