Resonant tunneling through a self-assembled Si quantum dot

Abstract

Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/1 nm-SiO2/a single Si quantum dot/1 nm-SiO2/H+-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. © 1997 American Institute of Physics.