Preparation of poison gas sensor from WO3 nanostructure by pulsed laser deposition

Abstract

In this work, a Nd:YAG laser beam (λ=532nm, repetition rate 1 Hz with the pulse duration 10 ns) has been has been used to deposit pt dopant WO3 films with different doping (2,3,5)% on glass and silicon substrates at a fixed substrate temperature 400 °C, laser fluence 1.6 J/cm2 and number of pulses equal 100 pulse. WO3 thin films were investigated by using different techniques such as X-Ray Diffraction (XRD), Atomic Force Microscope (AFM), UV-VIS transmittance Spectroscopy, Hall Effect, and sensing properties equipment. The sensitivity were calculated of NO2 gas for pure and WO3:Pt with concentration 3ppm at room temperature has been determined. The highest sensitivity was 80% at WO3 dopant with Pt 5%.