Dynamic Mechanical and Dielectric Relaxation Behavior of Chitosan Films: Influence of Water Content

Abstract

The dynamic mechanical dielectric behavior of neutralized chitosan films has been investigated as a function of water content and temperature. Chitosan films exhibit three relaxation processes in the low frequency range: the first one between 86–102 °C, it corresponds to the α ‐relaxation process and shifts to higher temperatures with decreasing water content; a second relaxation was observed from 80 °C to the onset of thermal degradation (240 °C) and it is identified as the σ ‐relaxation often associated with proton mobility; and a third relaxation process in the 240–300 °C temperature range that corresponds to chitosan thermal degradation.