Preparation of copper indium disulphide films by airless spraying

Abstract

Films of copper indium disulphide were prepared by airless spraying an aqueous solution containing cuprous and indium chlorides, ammonium and hydrazinium chlorides, and thiourea. The films present the characteristic X-ray diffraction lines of CuInS2, with a preferential orientation along the (112) axis. The optical and semiconductor properties of the films were evaluated by electrochemical and photoelectrochemical methods. They are n type, with ND between 1017 and 5 × 1017 cm-3. The band gap energy, determined from spectral photocurrent responses, is 1.4 eV, this value being slightly different from that obtained from the transmission spectrum (1.45 eV). © 1988.