Silicon MOSFETs as room temperature terahertz detectors

Abstract

Because of their competitive Noise Equivalent Power (NEP) at room temperature and their fast modulation frequency, Field Effect Transistors (FETs) are one of the most promising devices for room temperature multipixel THz detection and imaging. We report here on an experimental study of the sub-THz detection as a function of the gate length in Silicon FETs and discuss the physical basis of their optimisation. © 2009 IOP Publishing Ltd.