Localized electronic vacancy level and its effect on the properties of doped manganites

Abstract

Oxygen vacancies are common to most metal oxides and usually play a crucial role in determining the properties of the host material. In this work, we perform ab initio calculations to study the influence of vacancies in doped manganites La (1 - x)Sr xMnO 3, varying both the vacancy concentration and the chemical composition within the ferromagnetic-metallic range (0.2