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Temperature dependence of SilnZnO thin film transistor fabricated by solution process

Transactions on Electrical and Electronic Materials (2015) 16(1) 46-48
DOI: 10.4313/TEEM.2015.16.1.46
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Abstract

Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect of annealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibited saturation mobility of 1.37 cm2 /Vs, a threshold voltage of -7.2 V, and an on-off ratio of 1.1 × 105.

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Lee, S. Y., Kang, T., Han, S. M., Lee, Y. S., & Choi, J. Y. (2015). Temperature dependence of SilnZnO thin film transistor fabricated by solution process. Transactions on Electrical and Electronic Materials, 16(1), 46–48. https://doi.org/10.4313/TEEM.2015.16.1.46

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