Spin transfer in nanomagnetic devices with perpendicular anisotropy

Abstract

Spin momentum transfer in a nanomagnetic device with perpendicular magnetic anisotropy for both free and fixed magnetic layers is studied. The perpendicular anisotropy is induced by using CoFePt multilayer. The magnetoresistive loop shows that the perpendicular switching fields for the free and fixed layers are 170 and 380 Oe, respectively, with ΔRR=0.47%. Resistance-current scanning clearly shows a full out-of-plane switching of the free layer magnetization under a sweeping current, which fully excludes the effect of switching by the magnetic field generated by the current. The critical current density is around 1.0× 108 A cm2, which could be tuned by changing the CoFePt multilayer structures. © 2006 American Institute of Physics.