Abstract
In this paper, we demonstrate for the first time experimentally measured current filaments in IGBTs under repetitive Short-Circuit (SC) events. These current filaments were discovered with the help of Thermo-Reflectance Microscopy (TRM). The destruction current as function of the applied collector-emitter voltage (VCE) was determined for two differently wire-bonded 15A-1200V IGBT chips. The repetitive SC events in combination with TRM measurement indicate a wide range of non-destructive current filaments at different VCE. Similar filament formation under short-circuit conditions were observed in supporting TCAD device simulations based on multi-cell IGBT structure. These filaments have similar dimensions to the current filaments measured by TRM.
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Bhojani, R., Kowalsky, J., Lutz, J., Kendig, D., Baburske, R., Schulze, H. J., & Niedernostheide, F. J. (2018). Observation of current filaments in IGBTs with thermoreflectance microscopy. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (Vol. 2018-May, pp. 164–167). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISPSD.2018.8393628
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