Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors

Abstract

In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage ( ${V} _{\mathrm{ ON}}$ ) and threshold voltage ( $V_{T}$ ) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of $V_{T}$ and ${V} _{\mathrm{ ON}}$ are quantitatively analyzed by coefficient of determination ( ${R} ^{2}$ ) in the regression analysis. The ${R} ^{2}$ values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias.