Direct synthesis of β-SiC and h-BN coated β-SiC nanowires

Abstract

β-Silicon carbide (β-SiC) nanowires (NWs) have been grown by thermal treatment of commercial silicon particles disposed in a graphite crucible under nitrogen atmosphere. By the same way, treatment under argon of a mixture of a boron nitride (BN) based powder and silicon particles led to h-BN coated β-SiC nanowires. The structures of both nanoobjects have been investigated by HRTEM, EDX and EELS. © 2002 Elsevier Science Ltd. All rights reserved.