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Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111)

Physica Status Solidi (A) Applications and Materials Science (2006) 203(7) 1618-1621
DOI: 10.1002/pssa.200565348
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Abstract

Having previously reported growth of uncracked AlN/GaN distributed Bragg reflectors (DBRs), this paper reports use of superlattices as a replacement for AlN layers to produce high quality crack free DBRs. In addition an InGaN LED structure grown above the DBR has been studied and showed improved uniformity in comparison with a standard LED structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

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Charles, M. B., Zhang, Y., Kappers, M. J., & Humphreys, C. J. (2006). Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111). Physica Status Solidi (A) Applications and Materials Science, 203(7), 1618–1621. https://doi.org/10.1002/pssa.200565348

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