Chemical Doping: Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics (Adv. Mater. 42/2019)

Abstract

In article number 1903613, Hiroki Ago and co‐workers demonstrate the chemical‐doping‐induced conversion of ambipolar WSe2 monolayers to p‐ and n‐type semiconductors. The chemical doping not only allows control over the main carriers, but also significantly increases the carrier mobility. By integrating the chemically doped WSe2, a CMOS inverter and an in‐plane p–n junction with superior performance are successfully fabricated.