Abstract
In situ ultraviolet photoelectron spectroscopy (UPS) measurements have been performed at GaInAs/GaAs (100) interfaces. The high depth resolution of the UPS technique applied to the specific case of GaInAs/GaAs heterostructures [core-level photoelectron escape depth λ≊2.1 monolayers (MLs)] is shown, yielding quantitative informations on the Ga/In atomic profiles at the ML scale. A surface segregation model is developped and the phenomenological segregation energy is obtained by UPS. This energy is used to generate potential energy profiles in a calculation of the energy of photoluminescence (PL) lines in GaInAs/GaAs quantum wells; the quantitative agreement with measured PL lines is very good.
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CITATION STYLE
Larive, M., Nagle, J., Landesman, J. P., Marcadet, X., Mottet, C., & Bois, P. (1993). In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 11(4), 1413–1417. https://doi.org/10.1116/1.586951
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