Abstract
A novel contact resistive random access memory (CRRAM) device based a temperature sensor is proposed and investigated in this letter. By establishing the relationship between CRRAM's random telegraph noise (RTN) signal and temperature, a new temperature sensing scheme is demonstrated for the first time. With a simple comparator circuit, a digital output temperature sensor is successfully implemented based on the temperature-dependent RTN signal. The new sensing scheme is very suitable to low-power low-speed sensor modules. © 2012 IEEE.
Author supplied keywords
Cite
CITATION STYLE
Chang, L. S., Huang, C. Y., Tseng, Y. H., King, Y. C., & Lin, C. J. (2013). Temperature sensing scheme through random telegraph noise in contact RRAM. IEEE Electron Device Letters, 34(1), 12–14. https://doi.org/10.1109/LED.2012.2226137
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
