Low temperature processing of alkoxide-derived PMN thin films

Abstract

A well-crystallized Pb(Mg 1/3Nb 2/3)O 3 (PMN) thin film on a Si wafer was prepared using low-temperature processing with a LaNiO 3 (LNO) seeding layer. The PMN thin film was crystallized at 550 °C on a LNO/Si stacking structure. Additionally, we attempted to apply the compressive residual stress to PMN layers for a Curie temperature shift. Results show that the ferroelectric property remained at room temperature. The remanent polarization increased concomitantly with increasing annealing temperature.