Hole mobility of p-type ß-FeSi 2 thin films grown from Si/Fe multilayers

Abstract

The hole mobility of intentionally undoped p -type ß- FeSi2 thin films grown by a multilayer method was investigated. With increasing annealing temperature and time, the hole mobility increased to approximately 450 cm2 V s at room temperature (RT). The observed hole mobility was analyzed by considering various carrier scatterings such as acoustic-phonon and polar-optical-phonon scatterings, intervalley scattering, ionized impurity scattering, and grain-boundary scattering. The nice fit of the mobility to the experimental results reveals that the polar-optical-phonon scattering determines the hole mobility at RT. © 2005 American Institute of Physics.