Abstract
Aberration corrected STEM EELS is used to investigate point defects in Cu2ZnSnS4 (CZTS). Nano-scale clusters of ZnCu anti-site donors are observed with the donor concentration being sufficiently high to degenerately dope the semiconductor. Uncompensated donors and acceptors result in electrostatic potential fluctuations within the material. The effect of these potential fluctuations on the photovoltaic device properties is discussed.
Cite
CITATION STYLE
Mendis, B. G., Shannon, M. D., Goodman, M. C. J., Major, J. D., Taylor, A. A., Halliday, D. P., & Durose, K. (2013). The nature of electrostatic potential fluctuations in Cu 2ZnSnS4 and their role on photovoltaic device performance. In Journal of Physics: Conference Series (Vol. 471). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/471/1/012014
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