Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Abstract

2D transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, vanadium (V) substitutionally doped monolayer MoS2 (VMS) demonstrated as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ≈3 × 10−1 S m−1 of MoS2 to ≈105 S m−1 upon doping to the level of 9 at.%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the charge-to-spin conversion at the Py/VMS interface suggesting the latter's potential as a spin-orbit torque layer in 2D spintronic devices.