Features and benefits of III-N growth by ammonia-MBE and plasma assisted MBE

Abstract

Features of III-N heterostructures growth by ammonia and plasma MBE are discussed. Use of ammonia MBE for growth high temperature AlN/AlGaN buffer layer at the initial stage allows to improve the structural quality and reduce the dislocation density in the GaN layers down to 9×108-l×109 cm-2. However, to produce an effective p-doping, as well as growth of In-containing layers (InGaN with a high content of In and InAlN, lattice matched with GaN) is necessary to use a method that has no limits at low temperatures-plasma-assisted MBE.