A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers

0Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.

Abstract

This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The proposed architecture uses four variable gain amplifiers (VGA) that are active at any given time and are switched to generate the four quadrants. Compared to conventional architectures, this structure is more compact and produces double the output amplitude. The design offers 6-bit phase control for 360°, and the total root mean square (RMS) phase and gain errors are 2.36° and 1.46 dB, respectively. The design occupies an area of 1309.4 (Formula presented.) m × 1783.8 (Formula presented.) m (including pads).

Cite

CITATION STYLE

APA

del Pino, J., Khemchandani, S. L., San-Miguel-Montesdeoca, M., Mateos-Angulo, S., Mayor-Duarte, D., Saiz-Perez, J. L., & Galante-Sempere, D. (2023). A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. Micromachines, 14(6). https://doi.org/10.3390/mi14061184

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free