Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO 3-doped pentacene layer

Abstract

We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO 3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO 3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO 3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO 3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO 3 doping. © 2012 American Institute of Physics.