Abstract
The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For (Cu0.055Ga0.945)N, the model reveals a magnetic moment of 1.47μB per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%. © 2009 Journal of Magnetics.
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Kang, B. S., Heo, C. M., Lyu, K. K., & Yu, S. C. (2009). First-principles study on magnetism of Cu in GaN. Journal of Magnetics, 14(3), 114–116. https://doi.org/10.4283/JMAG.2009.14.3.114
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