Abstract
The titanium-doped Ge2 Sb2 Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase change characteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly. © 2011 American Institute of Physics.
Cite
CITATION STYLE
Wei, S. J., Zhu, H. F., Chen, K., Xu, D., Li, J., Gan, F. X., … Li, G. H. (2011). Phase change behavior in titanium-doped Ge2 Sb2 Te5 films. Applied Physics Letters, 98(23). https://doi.org/10.1063/1.3597617
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
