Abstract
Spintronic devices provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multiphysics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here, we present physics-based device models based on 4×4 matrices for the spin-orbit coupling (SOC) part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric (ME) switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, are presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of the MESO implementation and the functional operation of buffers, synchronous oscillators, and majority gates.
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Li, H., Nikonov, D. E., Lin, C. C., Camsari, K., Liao, Y. C., Hsu, C. S., … Young, I. A. (2022). Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 8(1), 10–18. https://doi.org/10.1109/JXCDC.2022.3143130
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