H1N1 influenza virus interaction with a porous layer of silicon nanowires

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Abstract

Here, the non-specific interaction of the H1N1 influenza virus with a porous layer of silicon nanowires (PSi NWs) was studied by transmission and scanning electron microscopy (TEM, SEM, respectively) and optical spectroscopy. PSi NW layer with a thickness of about 200 nm was fabricated by metal-assisted chemical etching of p-type highly doped crystalline silicon wafers, and consist of porous nanowires with a diameter of 50-200 nm, and a distance between the nanowires of 100-200 nm. It was shown that during the adsorption of viruses, viral particles with a diameter of about 100 nm bind to the porous surface of the nanowires. This interaction was revealed using TEM, SEM, and causes wavelength shifts in the Fabry-Perot fringes in the reflection spectrum of visible light from the PSi NW layer. The results show that thin layers of PSi NWs are a promising nanomaterial for creating filters and sensors for binding and detection of viruses.

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Gonchar, K. A., Agafilushkina, S. N., Moiseev, D. V., Bozhev, I. V., Manykin, A. A., Kropotkina, E. A., … Osminkina, L. A. (2020). H1N1 influenza virus interaction with a porous layer of silicon nanowires. Materials Research Express, 7(3). https://doi.org/10.1088/2053-1591/ab7719

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