Journal Article

Bipolar Area-Image Sensor

IEEE Transactions on Electron Devices (1982) 29(10) 1637-1639
DOI: 10.1109/T-ED.1982.20929
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Abstract

A new area-image sensor, utilizing shift registers in a bipolar transistor scheme, is reported. The preliminary device consists of 64 × 64 pixels with p-n junction photodiode and row-and column-PCD scanners. Experimentally found advantages were simple process, high fabrication yield, low output impedance, and high output power. A possibility for making a bipolar area-image sensor is verified. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.

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Ogino, T., Sakaue, M., Tamama, T., & Mizushima, Y. (1982). Bipolar Area-Image Sensor. IEEE Transactions on Electron Devices, 29(10), 1637–1639. https://doi.org/10.1109/T-ED.1982.20929

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