Raster scanning depth profiling of layer structures

Abstract

Implications in the use of the electronic gating scheme in depth profiling studies of layer structures by means of raster scanning secondary ion mass spectrometry are investigated. The profile of the sputtering crater and the intensity variation after break-through are calculated with the scan width and the gate width as parameters. Thick (5.6 μm) magnetic garnet layers grown an a non-magnetic garnet substrate were used for depth profiling measurements. A relative depth resolution of 1% could be obtained. Comparison of experimental results with calculated data shows excellent agreement. © 1977 Springer-Verlag.