Influence of Coulomb interaction effect on the electrical transport for few-layered PtSe2 films

Abstract

The Coulomb effect is a particularly significant topic in quasi-two-dimensional systems. Here, we carried out comprehensive measurements of electrical transport properties of fewer-layer PtSe 2 films with and without antidot arrays. For as-grown PtSe 2 films, the sheet conductance σ □ varies linearly with the logarithm of temperature at low temperature, which can be well described by the Altshuler and Aronov electron-electron interaction (EEI) effect, and then the result was further quantitatively confirmed by the ratios of a relative change of the Hall coefficient Δ R H/R H to that of sheet resistance Δ R □/R □. While after milling of antidot arrays the PtSe 2 film possesses inhomogeneous structure, it still presents metallic transport behavior. The overall σ □ and R H characteristics can be explained by the current EEI theories in granular metals. Our results not only reveal the fundamental physics of PtSe 2 films, but also provide powerful experimental evidence for the presence of the Coulomb EEI effect in the family of transition metal dichalcogenides. This work presents the subtle change of charge transport properties by introducing antidot arrays, which may be of benefit in improving sensitivity and stability of nanoscale electronic devices.