Abstract
A prospective move to 10.5 and 11.2 nm wavelengths, as an alternative to 6.7 and 13.5 nm, for next generation nanolithography is discussed. Ten-mirror optical systems based on Ru/Be, Mo/Be, Rh/Sr, Mo/Si, and La/B multilayers were compared for efficiency at their working wavelengths. It is shown that a transition to 10.5 nm and 11.2 nm may be a solution to the problem of increasing performance and resolution of a projection system. © 2013 © 2013 Author(s).
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CITATION STYLE
Chkhalo, N. I., & Salashchenko, N. N. (2013). Next generation nanolithography based on Ru/Be and Rh/Sr multilayer optics. AIP Advances, 3(8). https://doi.org/10.1063/1.4820354
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