We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. © 2012 American Institute of Physics.
CITATION STYLE
Berhanuddin, D. D., Lourenço, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M., & Homewood, K. P. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. Journal of Applied Physics, 112(10). https://doi.org/10.1063/1.4766390
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