Low-Loss, Single-Mode, Optical Phase Modulator in SIMOX Material

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Abstract

This paper reports results of the simulation of an optical phase modulator. The proposed modulator consists of an elongated p-i-n structure fabricated in a silicon-on-insulator material such as SIMOX. It utilizes the free-carrier effect to produce the desired refractive index change in a single-mode optical rib waveguide. The MEDICI two-dimensional semiconductor device simulation package has been employed to optimize the overlap between the injected free carriers and the propagating optical guided mode. Although the device is designed to support a single optical guided mode, it measures several micrometers in cross-sectional dimensions, thereby simplifying fabrication and allowing efficient coupling to/from other single-mode devices. Furthermore, the device has an extremely high figure of merit, predicting over 200° of induced phase shift per volt per millimeter, as well as a low drive current of less than 10 mA. This is approximately an order of magnitude lower than most other reported devices in silicon. © 1994 IEEE. All rights reserved.

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Tang, C. K., Reed, G. T., Rickman, A. G., & Walton, A. J. (1994). Low-Loss, Single-Mode, Optical Phase Modulator in SIMOX Material. Journal of Lightwave Technology, 12(8), 1394–1400. https://doi.org/10.1109/50.317527

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