Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

G. Sabatini; C. Palermo; P. Ziadé; T. Laurent; H. Marinchio; H. Rodilla; J. Mateos; T. Gonzàlez; R. Teissier; L. Varani

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Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide (2010)

DOI: 10.1109/ICIMW.2010.5612857

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Abstract

By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This original vertical transport device has the potential to efficiently exploit the unrivalled transport properties of InAs to reach THz frequencies.

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Sabatini, G., Palermo, C., Ziadé, P., Laurent, T., Marinchio, H., Rodilla, H., … Varani, L. (2010). Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. https://doi.org/10.1109/ICIMW.2010.5612857

Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

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