Two-temperature principle for evaluating electrothermal performance of GaN HEMTs

Abstract

Self-heating effects in Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) can adversely impact both device reliability and electrical performance. Despite this, a holistic understanding of the relationship among heat transport mechanisms, device reliability, and degradation of electrical performance has yet to be established. This Letter presents an in-depth analysis of self-heating effects in GaN HEMTs using technology computer-aided design and phonon Monte Carlo simulations. We examine the differential behaviors of the maximum channel temperature (Tmax) and the equivalent channel temperature (Teq) in response to non-Fourier heat spreading processes, highlighting their respective dependencies on bias conditions and phonon ballistic effects. Our study reveals that Tmax, a crucial metric for device reliability, is highly sensitive to both heat source-related and cross-plane ballistic effects, especially in the saturation regime. In contrast, Teq, which correlates with drain current degradation, shows minimal bias dependence and is predominantly influenced by the cross-plane ballistic effect. These findings emphasize the importance of optimizing device designs to mitigate both Tmax and Teq, with a particular focus on thermal designs influenced by the heat source size. This work contributes to a deeper understanding of self-heating phenomena in GaN HEMTs and provides valuable insights for enhancing device performance and reliability.