Abstract
SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, as compared to 1.53 cm2/V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V. © (2014) Trans Tech Publications, Switzerland.
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Yen, C. T., Bakowski, M., Hung, C. C., Reshanov, S., Schöner, A., Lee, C. Y., … Huang, C. F. (2014). SiC epi-channel lateral MOSFETs. In Materials Science Forum (Vol. 778–780, pp. 927–930). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.927
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