Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

Abstract

Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition. © 2011 American Institute of Physics.