16 x 8 quantum dot array operation at cryogenic temperatures

Abstract

We developed a 16 x 8 quantum dot array and CMOS circuit hybrid chip (Q-CMOS). By optimizing the transistor design of Q-CMOS formed by fully depleted (FD)-SOI, it is possible to selectively control each of 16 x 8 quantum dots, and obtained characteristics of quantum dot variation for the first time. Due to the mesoscopic effect, the variation in the characteristics of the quantum dots is larger than the threshold voltage variation of the transistors. Thus, we have obtained an important finding that it is necessary to suppress the variability in order to realize a large-scale quantum computer. We have also confirmed that the characteristics of the quantum dots change depending on the applied gate voltages.