Fabrication of buried nanochannels by transferring metal nanowire patterns

Abstract

A method of fabricating channels with widths of 30-50 nm in silicon substrates with channels buried under overlying layers of dielectric materials has been demonstrated. Buried nanochannels with an opening size of 20 x 80 nm2 have been successfully fabricated on a silicon wafer by transferring metal nanowire patterns. With further refinement, the method might be useful for fabricating nanochannels for the manipulation and analysis of large biomolecules at single-molecule resolution.