Efficient optimization of high vacuum chemical vapor deposition of niobium oxide on full wafer scale

Abstract

A systematic study of niobium oxide deposition using niobium tetraethoxy-dimethyl-amino-ethoxide (Nb(OEt)(4)(dmae)) precursor is presented. The deposition process was conducted in a high-vacuum chemical vapor deposition machine with precursor flux gradient capability. An efficient optimization of the deposition process was achieved and both mass-transport- and chemical-reaction-limited regimes were identified.