Scanning digital oil immersion lithography providing high-speed large area patterning with diffraction limited sub-micron resolution

Abstract

A high numerical aperture (NA) scanning digital oil immersion lithography scheme is proposed and demonstrated in this study. To successfully conduct the scanning digital oil immersion lithography, immersion oil should be removed from the photoresist layer before the development process. Also, uniformity of the projected light patterns becomes crucial in the quality of this high NA photolithography. To solve these issues, we developed a cleaning procedure for the immersion oil and an intensity calibration scheme to achieve a highly uniform intensity distribution of the projected patterns. With these preparations, we were able to achieve 400 nm resolution large area patterning with the developed scanning digital oil immersion lithography system and a better than 200 nm resolution in the single line patterning. Also, with a double layered photoresist scheme and our lab-prepared photoresist, we successfully achieved large area lift-off patterns of 400 nm metallic dot arrays through the scanning digital oil immersion lithography system.