Electronic structure and optical absorption of GaAs/ Alx Ga 1-x As and Alx Ga1-x As/GaAs core-shell nanowires

Abstract

The electronic structure of GaAs/ Alx Ga1-x As and Alx Ga1-x As/GaAs core-shell nanowires grown in the [001] direction is studied. The k·p method with the 6×6 Kohn-Lüttinger Hamiltonian, taking into account the split-off band is used. The variation in the energy level dispersion, the spinor contribution to the ground state and the optical interband absorption are studied. For some range of parameters the top of the valence band exhibits a camelback structure which results in an extra peak in the optical absorption. © 2010 The American Physical Society.