A novel dummy bitline driver for read margin improvement in an eSRAM

Abstract

Aggressive scaling of transistors is often accompanied by an increase in variability of its intrinsic parameters. In this paper, we point out the importance of considering sensitivity performances due to process variations during SRAM design. We propose a novel dummy bitline driver, an essential component in a self timed memory, which is less sensitive to process variations. A statistical sizing method of this dummy bitline driver is introduced so as to improve the read timing margin, while ensuring a high timing yield. The memory considered is a 256kb SRAM design in 90nm technology node. © 2008 IEEE.