Spatial distribution of residual stress in diamond-silicon carbide composites

Abstract

Raman spectroscopy and x-ray diffraction whole profile analysis were used to analyze strain in diamond crystals in diamond-silicon carbide composites. The composites were obtained by the infiltration technique from diamond and silicon powders at 8 GPa and 2173 K. Frequency shifts of Raman peak of diamond were used to calculate residual stress and then to draw maps of stress distribution on the surface of diamonds. Large stresses were formed near contact points between diamond crystals. Analysis of profiles of three x-ray reflections of diamond provided information on dislocations and crystallites sizes. After sintering crystallites which scattered x-ray coherently had small sizes which depended on the dimensions of diamond crystal used in the sintering process. © 2008 IOP Publishing Ltd.